PART |
Description |
Maker |
IXSH35N135A IXSH35N140A |
1350V high speed IGBT 1400V high speed IGBT
|
IXYS
|
IXSP24N60B |
48 A, 600 V, N-CHANNEL IGBT, TO-220AB TO-220, 3 PIN High Speed IGBT
|
IXYS, Corp. IXYS Corporation
|
IXGH10N100A IXGH10N100 |
Low VCE(sat) IGBT, High speed IGBT
|
IXYS[IXYS Corporation]
|
IXGH30N60 IXGM30N60A IXGH30N60A IXGM30N60 |
LOW VCE(SAT) IGBT, HIGH SPEED IGBT
|
IXYS[IXYS Corporation]
|
IXGH20N60 IXGH20N60A |
Low VCE(sat) IGBT, High speed IGBT
|
IXYS Corporation
|
IR2308 IR2308S |
High Voltage and High Speed power MOSFET and IGBT Half Bridge Driver in a 8-pin DIP package High Voltage and High Speed power MOSFET and IGBT Half Bridge Driver in a 8-lead SOIC package
|
International Rectifier
|
AUIRS2112S |
The AUIRS2112S is a high voltage, high speed power MOSFET and IGBT driver with independent high- and lowside referenced output channels.
|
International Rectifier
|
IRS26072DSPBF |
The IRS26072D is a high voltage, high speed power MOSFET and IGBT driver with independent high and low side referenced output channels.
|
International Rectifier
|
APT46GA90JD40 |
High Speed PT IGBT Insulated Gate Bipolar Transistor - Power MOS 8; Package: ISOTOP®; BV(CES) (V): 900; VCE(sat) (V): 2.5; IC (A): 46; 87 A, 900 V, N-CHANNEL IGBT
|
Microsemi Corporation Microsemi, Corp.
|